BSC011N03LSIATMA1 vs IRLR8726TRLPBF Perbandingan
Perbandingan bersamaan detil BSC011N03LSIATMA1 dari Infineon dan IRLR8726TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΩ Power MOSFET | Infineon
BSC011N03LSIATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSC011N03LSIATMA1 | IRLR8726TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ 30 V | — |
| Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 37 A | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΩ (typical) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 96 W | — |
| Suhu Hubung Kerja | -55 °C to +150 °C | -55C to +175C |
| Paket | PG-TDSON-8-7 (Surface Mount) | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) |
| Status RoHS | Compliant | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 86 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) Max at VGS=10V | — | 5.8 mOhm |
| On-Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | 15 nC |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Maximum Power Dissipation (PD) at TC=25C | — | 75 W |
| Technology Family | — | StrongIRFET |
| RoHS Compliance | — | ROHS3 Compliant |
| Lead-Free | — | Yes (PBF suffix) |