BSZ096N10LS5ATMA1 vs IPD70N10S312ATMA1 तुलना
विस्तृत दोनों ओर की तुलना BSZ096N10LS5ATMA1 द्वारा Infineon और IPD70N10S312ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ सक्रिय
विशेषता तुलना
| पैरामीटर | BSZ096N10LS5ATMA1 | IPD70N10S312ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Product Family | OptiMOS 5 | OptiMOS-T Power-Transistor |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS max) | 100 V | — |
| Gate-Source Voltage (VGS max) | 20 V (typical) | — |
| Continuous Drain Current (ID, TC=25 °C) | 40 A | — |
| Maximum Silicon Drain Current (ID max) | 62 A | — |
| Pulse Drain Current (ID,pulse) | 160 A | — |
| On-Resistance RDS(on) max | 9.6 mΩ at VGS=10 V | — |
| Total Power Dissipation (Ptot, TC=25 °C) | 69 W | — |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | — |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 °C) | — |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | — |
| पैकेज | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान रेंज | -55 °C to +150 °C (junction) | — |
| Technology | OptiMOS 5 trench MOSFET | — |
| Gate Drive | Logic-level compatible | — |
| ESD Protection | Yes (gate-integrated) | — |
| RoHS स्थिति | Compliant | — |
| Packaging Code | ATMA1 (tape and reel) | — |
| Part Number | — | IPD70N10S312ATMA1 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 70 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-State Resistance (RDS(on)) | — | 11.1 mΩ @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Input Capacitance (Ciss) | — | 4355 pF @ 25 V |
| Total Gate Charge (Qg) | — | 65 nC @ 10 V |
| Operating Temperature (TJ) | — | -55 °C to +175 °C |
| MSL स्तर | — | MSL1 (up to 260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100 % (per datasheet) |
| RoHS Compliance | — | Green product, RoHS compliant |