BSZ096N10LS5ATMA1 vs IPD70N10S312ATMA1 Comparison
Detailed side-by-side comparison of BSZ096N10LS5ATMA1 by Infineon and IPD70N10S312ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 β Active
Specification Comparison
| Parameter | BSZ096N10LS5ATMA1 | IPD70N10S312ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Product Family | OptiMOS 5 | OptiMOS-T Power-Transistor |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS max) | 100 V | β |
| Gate-Source Voltage (VGS max) | 20 V (typical) | β |
| Continuous Drain Current (ID, TC=25 Β°C) | 40 A | β |
| Maximum Silicon Drain Current (ID max) | 62 A | β |
| Pulse Drain Current (ID,pulse) | 160 A | β |
| On-Resistance RDS(on) max | 9.6 mΞ© at VGS=10 V | β |
| Total Power Dissipation (Ptot, TC=25 Β°C) | 69 W | β |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | β |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 Β°C) | β |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | β |
| Technology | OptiMOS 5 trench MOSFET | β |
| Gate Drive | Logic-level compatible | β |
| ESD Protection | Yes (gate-integrated) | β |
| RoHS Status | Compliant | β |
| Packaging Code | ATMA1 (tape and reel) | β |
| Part Number | β | IPD70N10S312ATMA1 |
| FET Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc) | β | 70 A |
| Pulsed Drain Current (IDM) | β | 180 A |
| Power Dissipation (PD, Tc) | β | 125 W |
| On-State Resistance (RDS(on)) | β | 11.1 mΞ© @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Input Capacitance (Ciss) | β | 4355 pF @ 25 V |
| Total Gate Charge (Qg) | β | 65 nC @ 10 V |
| Operating Temperature (TJ) | β | -55 Β°C to +175 Β°C |
| MSL Level | β | MSL1 (up to 260 Β°C peak reflow) |
| Automotive Qualification | β | AEC-Q101 |
| Avalanche Tested | β | 100 % (per datasheet) |
| RoHS Compliance | β | Green product, RoHS compliant |