EP1SGX40GF800C5N vs EP1SGX40FF1020C5 तुलना
विस्तृत दोनों ओर की तुलना EP1SGX40GF800C5N द्वारा Intel और EP1SGX40FF1020C5 द्वारा Intel. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | EP1SGX40GF800C5N | EP1SGX40FF1020C5 |
|---|---|---|
| ब्रांड | Intel | Intel |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | Obsolete | NRND |
| Family | Stratix GX | Stratix GX |
| Logic Elements | 41,250 | 41,250 |
| Total RAM Bits | 3,432,192 (3.4 Mbit) | 3,423,744 bits |
| DSP Blocks | 14 | [DATA_NEEDED: DSP block count] |
| Embedded Multipliers (9-bit equivalent) | 56 | — |
| Transceiver Channels | 20 (up to 3.1875 Gbps per channel) | 20 (up to 3.125 Gbps) |
| Maximum User I/O Pins | [DATA_NEEDED: max user I/O count for 780-pin BGA] | — |
| PLLs | 24 | [DATA_NEEDED: PLL count] |
| Clock Networks | 8 phase-locked | — |
| पैकेज | 780-pin FineLine BGA | 1020-ball FCBGA (FF), 1.00 mm pitch, 33 x 33 mm |
| Speed Grade | -5 (slower than -6/-7) | — |
| ऑपरेटिंग तापमान | Commercial (0C to +85C) | 0C to +85C (commercial, -C5 speed grade) |
| Core Voltage | 1.5 V | 1.5 V (1.425 V to 1.575 V) |
| Process Technology | 0.13 µm SRAM | CMOS, 0.13 um |
| Configuration Method | EPC enhanced configuration devices or JTAG | — |
| RoHS स्थिति | [DATA_NEEDED: explicit RoHS statement for this specific MPN] | [DATA_NEEDED: RoHS status] |
| Lead-Free | [DATA_NEEDED: lead-free finish] | — |
| Configurable Logic Blocks (CLBs) | — | 4,125 |
| Number of I/O Banks | — | [DATA_NEEDED: number of I/O banks] |
| Seated Height | — | 3.50 mm |
| Maximum User I/O | — | [DATA_NEEDED: max user I/O count] |
| माउंटिंग प्रकार | — | Surface Mount |
| MSL स्तर | — | [DATA_NEEDED: MSL rating] |