EP2S180F1020C5N vs EP2S180F1020C3 तुलना
विस्तृत दोनों ओर की तुलना EP2S180F1020C5N द्वारा Intel और EP2S180F1020C3 द्वारा Intel. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | EP2S180F1020C5N | EP2S180F1020C3 |
|---|---|---|
| ब्रांड | Intel | Intel |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | Obsolete | Obsolete |
| Family | Stratix II | — |
| Logic Elements | 179400 | — |
| LABs/CLBs | 8970 | — |
| Total RAM Bits | 9383040 | — |
| User I/O | 742 | — |
| पैकेज | 1020-BBGA, FCBGA (33x33 mm) | 1020-ball FBGA (flip-chip BGA) |
| Supplier Device Package | 1020-FBGA (33x33) | — |
| Core Voltage | 1.15 V to 1.25 V (typ. 1.2 V) | 1.2 V |
| Process Technology | 90 nm | — |
| Speed Grade | C5 (commercial) | C3 |
| ऑपरेटिंग तापमान | 0C to +85C (commercial) | Commercial (0C to +85C) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Number of Terminals | 1020 (BGA ball grid) | — |
| RoHS स्थिति | Compliant (N suffix = lead-free) | [DATA_NEEDED: RoHS status] |
| Lead Free | Yes (Pb-free terminal finish) | — |
| Configuration | SRAM-based, JTAG / Active Serial | — |
| Series | — | Stratix II |
| Device Family | — | EP2S180 |
| Equivalent Logic Elements (LEs) | — | 179,400 |
| Logic Array Blocks (LABs) | — | 8,970 |
| Embedded Memory (RAM bits) | — | 9,383,040 |
| Maximum User I/Os | — | 742 |
| Process Node | — | 90 nm, all-layer copper SRAM |
| DSP Blocks | — | Dedicated high-speed multipliers |
| Memory Interfaces Supported | — | DDR2 SDRAM, QDRII SRAM, RLDRAM II |
| I/O Standards | — | LVDS, LVPECL, SSTL, HSTL |
| Configuration Method | — | SRAM-based (volatile, requires boot device) |
| Development Toolchain | — | Quartus II / Quartus Prime |