EP2S180F1020C5N vs EP2S180F1020C3 比較
詳細並排比較 EP2S180F1020C5N 由 Intel 與 EP2S180F1020C3 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP2S180F1020C5N | EP2S180F1020C3 |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | Obsolete | Obsolete |
| Family | Stratix II | — |
| Logic Elements | 179400 | — |
| LABs/CLBs | 8970 | — |
| Total RAM Bits | 9383040 | — |
| User I/O | 742 | — |
| 封裝 | 1020-BBGA, FCBGA (33x33 mm) | 1020-ball FBGA (flip-chip BGA) |
| Supplier Device Package | 1020-FBGA (33x33) | — |
| Core Voltage | 1.15 V to 1.25 V (typ. 1.2 V) | 1.2 V |
| Process Technology | 90 nm | — |
| Speed Grade | C5 (commercial) | C3 |
| 工作溫度 | 0C to +85C (commercial) | Commercial (0C to +85C) |
| 安裝類型 | Surface Mount | Surface Mount |
| Number of Terminals | 1020 (BGA ball grid) | — |
| RoHS 狀態 | Compliant (N suffix = lead-free) | [DATA_NEEDED: RoHS status] |
| Lead Free | Yes (Pb-free terminal finish) | — |
| Configuration | SRAM-based, JTAG / Active Serial | — |
| Series | — | Stratix II |
| Device Family | — | EP2S180 |
| Equivalent Logic Elements (LEs) | — | 179,400 |
| Logic Array Blocks (LABs) | — | 8,970 |
| Embedded Memory (RAM bits) | — | 9,383,040 |
| Maximum User I/Os | — | 742 |
| Process Node | — | 90 nm, all-layer copper SRAM |
| DSP Blocks | — | Dedicated high-speed multipliers |
| Memory Interfaces Supported | — | DDR2 SDRAM, QDRII SRAM, RLDRAM II |
| I/O Standards | — | LVDS, LVPECL, SSTL, HSTL |
| Configuration Method | — | SRAM-based (volatile, requires boot device) |
| Development Toolchain | — | Quartus II / Quartus Prime |