EP2SGX90EF1152C3ES vs EP2SGX60EF1152C4 तुलना
विस्तृत दोनों ओर की तुलना EP2SGX90EF1152C3ES द्वारा Intel और EP2SGX60EF1152C4 द्वारा Intel. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Intel
EP2SGX90EF1152C3ES - Stratix II GX FPGA 90nm 558 I/O 1152-BBGA | Intel
EP2SGX90EF1152C3ES ⚠ अंतिम खरीदIntel
EP2SGX60EF1152C4 - Stratix II GX FPGA, 60K LE, 1152-FBGA | Intel
EP2SGX60EF1152C4 ⚠ अंतिम खरीदविशेषता तुलना
| पैरामीटर | EP2SGX90EF1152C3ES | EP2SGX60EF1152C4 |
|---|---|---|
| ब्रांड | Intel | Intel |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | अंतिम बार खरीदें | अंतिम बार खरीदें |
| Family | Stratix II GX | — |
| Process Node | 90 nm | — |
| Logic Elements | 90,960 | — |
| Embedded Memory | 4,520,448 bits (approx. 4.5 Mbit) | — |
| User I/O Pins | 558 | 534 |
| पैकेज | 1152-BBGA (FineLine BGA, 35x35 mm) | — |
| Speed Grade | C3 | C4 (commercial) |
| Temperature Grade | Commercial Extended (-40 C to +100 C) | — |
| Core Voltage | 1.5 V (Enhanced, 'E' suffix) | 1.15 V to 1.25 V |
| High-Speed Transceivers | Up to 12 channels (per Stratix II GX family) | — |
| Transceiver Data Rate | Up to 6.375 Gbps per channel (family spec) | — |
| DSP Blocks | Yes, dedicated 18x18 multipliers and accumulators | — |
| PLL Count | [DATA_NEEDED: PLL count for EP2SGX90 variant] | — |
| User I/O Banks | 24 (per package datasheet) | — |
| Configuration | SRAM-based, supports Fast Passive Parallel, Fast Active Serial, JTAG | — |
| माउंटिंग प्रकार | Surface Mount (BGA) | Surface Mount |
| RoHS स्थिति | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Device Family | — | Stratix II GX |
| Logic Elements (LE) | — | 60,440 |
| Logic Array Blocks / CLBs | — | 3022 |
| Total RAM Bits | — | 2,544,192 |
| Number of LABs/CLBs | — | 3022 |
| Package Type | — | 1152-BBGA, FC-FBGA |
| Package Pitch | — | 1.0 mm |
| Internal Frequency | — | 717 MHz (max) |
| Propagation Delay | — | [DATA_NEEDED: propagation delay exact value] |
| Process Technology | — | 90 nm CMOS |
| ऑपरेटिंग तापमान | — | 0C to 85C (commercial) |