IPD35N10S3L26ATMA1 vs IPD30N06S2L13ATMA4 तुलना
विस्तृत दोनों ओर की तुलना IPD35N10S3L26ATMA1 द्वारा Infineon और IPD30N06S2L13ATMA4 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IPD35N10S3L26ATMA1 | IPD30N06S2L13ATMA4 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 | — |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | Planar (OptiMOS) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 35 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | — |
| Continuous Power Dissipation (PD) at TC=25°C | 71 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55°C to +175°C | — |
| पैकेज | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| MSL स्तर | MSL1 (up to 260°C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Avalanche Tested | 100% avalanche tested | 100 % production-tested |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | — |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | — |
| Part Family | — | OptiMOS |
| Channel Type | — | N-Channel |
| Mode | — | Enhancement |
| Drain-Source Voltage (Vds) | — | 55 V |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| ऑपरेटिंग तापमान | — | -55 °C to +175 °C (Tj) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| पिन काउंट | — | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |