MPX2102GP vs MPX2100GP तुलना
विस्तृत दोनों ओर की तुलना MPX2102GP द्वारा NXP Semiconductors और MPX2100GP द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | MPX2102GP | MPX2100GP |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | Pressure Sensors | Pressure Sensors |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) | 0 to 14.5 psi (0 to 100 kPa) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | 58.02 psi (400 kPa) |
| Full-Scale Output (VoutFS) | 40 mV at 10 V excitation | — |
| आउटपुट वोल्टेज रेंज | 0 mV to 40 mV | — |
| Excitation Voltage | 10 V typical (DC) | — |
| Sensitivity | 0.4 mV/kPa nominal | — |
| Linearity | 1.0 % maximum | — |
| Pressure Port | Male 0.19 in (4.93 mm) tube | — |
| ऑपरेटिंग तापमान | 0 C to +85 C | [DATA_NEEDED: operating temperature range] |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Temperature Compensation Range | 0 C to +85 C (on-chip) | — |
| पैकेज | 4-SIP Module (Unibody GP) | 4-SIP Module (Unibody through-hole) |
| माउंटिंग प्रकार | Through-Hole SIP | Through-Hole |
| Sensor Technology | Silicon piezoresistive, monolithic diaphragm | — |
| Offset (null) | 0 mV to 1 mV typical | — |
| RoHS स्थिति | Compliant | unknown |
| आउटपुट प्रकार | — | Wheatstone Bridge (analog voltage, ratiometric) |
| Full-Scale Span | — | 40 mV typical at 10 V supply |
| Offset | — | 0 mV minimum at 0 kPa |
| सप्लाई वोल्टेज | — | 10 V typical (ratiometric) |
| Maximum Operating Current | — | 6 mA |
| Port Size | — | Male 0.19 in (4.93 mm) barbed tube |
| Port Style | — | Barbed |
| Temperature Compensation | — | On-chip, calibrated |
| Technology | — | Silicon piezoresistive, MEMS |
| Termination Style | — | PCB (SIP pins) |