MPXV5004DP vs MPVZ5004GW6U तुलना
विस्तृत दोनों ओर की तुलना MPXV5004DP द्वारा NXP Semiconductors और MPVZ5004GW6U द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MPVZ5004GW6U - 0/3.92kPa Vented Gauge Pressure Sensor | 8-SMD
MPVZ5004GW6U ✓ सक्रियविशेषता तुलना
| पैरामीटर | MPXV5004DP | MPVZ5004GW6U |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | Pressure Sensors | Pressure Sensors |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Pressure Type | Differential (Dual Port, Same Side) | Vented Gauge |
| Pressure Range | 0 kPa to 3.92 kPa (0 to 0.57 PSI) | — |
| Port Type | Male Tube, 3.3 mm O.D., Dual Same-Side | — |
| सप्लाई वोल्टेज | 4.75 V to 5.25 V (5 V typical) | — |
| सप्लाई करंट | 10 mA typical | [DATA_NEEDED: supply current] |
| आउटपुट वोल्टेज रेंज | 1.0 V to 4.9 V at 5 V supply | 1 V to 4.9 V (at VDD = 5 V) |
| आउटपुट प्रकार | Analog, Ratiometric to VCC | Analog Voltage (ratiometric) |
| Accuracy | ±1.5% Vfss typical (after auto-zero) | ±1.5 %VFSS typical over compensated range |
| ऑपरेटिंग तापमान | 0°C to +85°C | — |
| Storage Temperature | -30°C to +100°C | — |
| पैकेज | 8-BSOP (CASE 1351-01), 12.06 mm width | 8-SMD Module with male 0.22" (5.59 mm) tube port |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Response Time | 1 ms typical | — |
| Sensing Technology | Piezoresistive (MEMS strain gauge) | — |
| RoHS स्थिति | Compliant | Compliant |
| Signal Conditioning | On-chip amplified and calibrated | On-chip amplified, temperature-compensated, calibrated |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Product Type | — | Piezoresistive Pressure Sensor |
| Operating Pressure Range | — | 0 kPa to 3.92 kPa (0 to 0.57 PSI) |
| Supply Voltage (VDD) | — | 5 V typical |
| ऑपरेटिंग तापमान रेंज | — | 0 °C to +85 °C (compensated) |
| Port Style | — | Male Tube, vertical |
| Technology | — | Piezoresistive MEMS with bipolar signal conditioning |