RTAX2000D-1CQ352V vs RTAX1000SL-CQ352V तुलना
विस्तृत दोनों ओर की तुलना RTAX2000D-1CQ352V द्वारा Microchip Technology और RTAX1000SL-CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ सक्रियMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000D-1CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Equivalent Gates | 2,000,000 | — |
| Logic Cells | 29,568 | 18,144 |
| CLBs | 19,712 | — |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | — |
| DSP Mathblocks | Up to 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Embedded SRAM with built-in FIFO control logic |
| Technology | Digital CMOS, antifuse (nonvolatile) | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose | 200 krad (Si) | — |
| Configuration | Live at power-up, single-chip, no external configuration device | — |
| Speed Grade | -1 | — |
| पैकेज | CQFP-352 (CQ352), ceramic | 352-pin Ceramic CQFP (CQ352V) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Screening | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| RoHS स्थिति | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance status] |
| Family | — | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent System Gates | — | 1,000,000 |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| MSL स्तर | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |