RTAX2000D-1CQ352V vs RTAX1000SL-CQ352V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX2000D-1CQ352V sa pamamagitan ng Microchip Technology at RTAX1000SL-CQ352V sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ NakahandaMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX2000D-1CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Equivalent Gates | 2,000,000 | — |
| Logic Cells | 29,568 | 18,144 |
| CLBs | 19,712 | — |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | — |
| DSP Mathblocks | Up to 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Embedded SRAM with built-in FIFO control logic |
| Technology | Digital CMOS, antifuse (nonvolatile) | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose | 200 krad (Si) | — |
| Configuration | Live at power-up, single-chip, no external configuration device | — |
| Speed Grade | -1 | — |
| Packhaging | CQFP-352 (CQ352), ceramic | 352-pin Ceramic CQFP (CQ352V) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Screening | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) | — |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS compliance status] |
| Family | — | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent System Gates | — | 1,000,000 |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |