RTAX2000D-CQ352V vs RTAX2000DL-CQ352V तुलना
विस्तृत दोनों ओर की तुलना RTAX2000D-CQ352V द्वारा Microchip Technology और RTAX2000DL-CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000D-CQ352V - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip
RTAX2000D-CQ352V ✓ सक्रियMicrochip Technology
RTAX2000DL-CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000D-CQ352V | RTAX2000DL-CQ352V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | RTAX-DSP (RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs) |
| Equivalent System Gates | 2,000,000 | 2,000,000 |
| Logic Cells | 29,568 | 29,568 |
| Configurable Logic Blocks (CLBs) | 19,712 | — |
| User I/O - Inputs | 166 | — |
| User I/O - Outputs | 166 | — |
| Supply Voltage (Core) | 1.425 V to 1.575 V (nominal 1.5 V) | — |
| Technology | CMOS, antifuse one-time programmable | CMOS, antifuse (nonvolatile, one-time programmable) |
| पैकेज | CQFP352 ceramic quad flat pack | CQFP-352, hermetically sealed ceramic, metal-sealed cofired |
| Terminal Pitch | 0.500 mm | 0.500 mm |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Configuration | One-time programmable (antifuse) | Live-at-power-up (antifuse, no external boot device) |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| Radiation Tolerance | Radiation-tolerant (space-flight applications) | — |
| Application Domain | Space-flight systems | — |
| Commercial Baseline Family | Actel/Microsemi Axcelerator | — |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.5 V nominal (1.425 V to 1.575 V) |
| DSP Mathblocks | — | Up to 120 (18-bit x 18-bit MAC, up to 125 MHz) |
| Maximum Combinatorial Delay | — | 1.100 ns |
| Total Ionizing Dose (TID) | — | 300 krad (functional); 200 krad (per family data) |
| ऑपरेटिंग तापमान | — | -55C to +125C |