RTAX2000SL-1LG624V vs RTAX2000S-1LG624V तुलना
विस्तृत दोनों ओर की तुलना RTAX2000SL-1LG624V द्वारा Microchip Technology और RTAX2000S-1LG624V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000SL-1LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1LG624V ✓ सक्रियMicrochip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000SL-1LG624V | RTAX2000S-1LG624V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Logic Cells | 32256 | — |
| CLBs (Configurable Logic Blocks) | 21504 | — |
| Equivalent Gates | 2000000 (approx.) | — |
| Family | RTAX-S/SL (radiation-tolerant FPGA) | — |
| Process Variant | SL (super low-power) CMOS | — |
| Core Supply Voltage | 1.5 V (nominal) | [DATA_NEEDED: core supply voltage] |
| ऑपरेटिंग तापमान | -55C to +125C | — |
| पैकेज | 624-terminal ceramic CGA (CG624) | CG624, 624-pin ceramic column grid array |
| माउंटिंग प्रकार | Surface Mount (column grid array) | Surface Mount |
| Programming Technology | Anti-fuse, one-time programmable | One-time programmable antifuse, nonvolatile |
| Configuration | Live at power-up, single-chip (no external config storage) | Single-chip, live at power-up (no boot device required) |
| Radiation Tolerance | Radiation-tolerant for space flight systems | — |
| Speed Grade | -1 | -1 |
| Application Class | Space flight / aerospace | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Embedded Memory | [DATA_NEEDED: embedded SRAM bits] | Up to 540 kbits SRAM with optional EDAC protection |
| Equivalent System Gates | — | 2,000,000 gates |
| Configurable Logic Blocks (CLBs) | — | 21,504 |
| User I/Os (maximum, family) | — | Up to 684 |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Process Technology | — | Digital CMOS |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| ऑपरेटिंग तापमान रेंज | — | [DATA_NEEDED: operating temperature range] |