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Renesas brings 100V E-mode GaN FETs to 48V AI data center and robotics power stages

Renesas adds four 100V E-mode GaN FETs (RDS(on) 1.2 to 5 milliohm) claiming up to 63 percent lower soft-switching FOM than comparable GaN devices, targeting 800 VDC / 48V power stages for AI servers, humanoid robotics and motor drives.

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TL;DR — tiga kalimat

  • Renesas introduced its first 100V E-mode GaN FET family with part numbers RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC [S1].
  • The source claims up to 35% lower hard-switching and up to 63% lower soft-switching FOM than comparable GaN devices [S1].
  • RDS(on) spans 1.2 to 5 milliohm in MOSFET-compatible packages, supporting 48V bus AI server and robotics power stages [S1].

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Renesas brings 100V E-mode GaN FETs to 48V AI data center and robotics power stages — Semiconductor News news briefEditorial cover for a Semiconductor News brief. Power motif; headline "Renesas brings 100V E-mode GaN FETs to 48V AI data center and robotics power stages". Reported key numbers: 100 V E-mode GaN. 1 cited source. Static cover (no animation).SEMICONDUCTOR NEWS · NEWS BRIEFRenesas brings 100V E-mode GaN FETs to48V AI data center and robotics powerstagesREPORTED KEY NUMBERS100 V E-mode GaN1 sourceXAIPART
Cover image generated from data already shown on this page: the category motif, the headline, and reported key numbers. No decorative illustration; no third-party image.

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Reported by EE Journal on 2026-10-07. Summarized and analyzed by XAIPART Editorial.

What happened

Renesas Electronics Corporation (TSE:6723) has expanded its GaN portfolio into low-voltage applications with its first family of 100V enhancement-mode (E-mode) GaN-based discrete power transistors.S1 The launch consists of four parts: the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC.S1 The source describes the FETs as intended for AI data centers, humanoid robotics, factory automation, industrial motor drives, power tools and solar microinverters.S1

Renesas states the family delivers "up to 35 percent lower hard-switching FOM and up to 63 percent lower soft-switching FOM than comparable GaN devices."S1 The parts use a silicon-compatible footprint intended to ease migration from existing silicon MOSFET layouts, and are offered in MOSFET-compatible packages with a wide RDS(on) range from 5 milliohm to 1.2 milliohm.S1 Bottom-side and dual-side cooling variants are available.S1

The source also states that using these low-voltage GaN devices in 800V HVDC power architectures "significantly reducing passive component size, switching losses and cooling requirements," and that, depending on architecture, the devices can achieve "up to 40 to 70 percent lower switching losses and up to twice the power density at the system level."S1 Akhil Nair, Senior Director, Low-Voltage GaN at Renesas, is quoted in the source commenting on GaN adoption for AI servers, robotics, industrial motor drives and renewable energy systems.S1

Key numbers from the source
MetricReported valueSource
Voltage class100 V E-mode GaNS1
Hard-switching FOM improvement vs comparable GaNUp to 35% lowerS1
Soft-switching FOM improvement vs comparable GaNUp to 63% lowerS1
RDS(on) range1.2 to 5 milliohmS1
Switching loss reduction (system level)Up to 40 to 70%S1
Power density improvement (system level)Up to 2xS1
Efficiency gain over silicon-based designs1 to 3%S1
Reverse recovery charge (Qrr)ZeroS1
Target bus trend800 VDC / 48V architecturesS1
Part numbersRTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC, RTP100E1P2G1FL-DSCS1
Lead time / pricingNot disclosedS1

Background timeline

  1. - Renesas announces its first 100V E-mode GaN FET family (RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC, RTP100E1P2G1FL-DSC) for AI data centers, robotics, motor drives and power tools [S1].
  2. Prior GaN milestones within this product line - not disclosed.

XAIPART take

Technical impact

The 100V E-mode parts sit in the sweet spot for 48V bus intermediate stages and 12V/5V point-of-load conversion in AI server motherboards, where Renesas cites up to 70% lower switching losses and up to 2x power density at the system level. XAIPART analysis. The stated zero Qrr and low Qoss matter most in hard-switched topologies such as totem-pole PFC and synchronous rectification; designers moving from silicon MOSFETs should re-tune dead-time and gate-drive strength because GaN's lower Qg combined with the silicon-compatible footprint can produce faster dV/dt than legacy silicon layouts expect.

Market impact

The four part numbers with RDS(on) spread from 5 milliohm down to 1.2 milliohm let Renesas cover everything from light-load buck phases to high-current motor-drive stages in humanoid robotics and factory automation using one footprint family. XAIPART analysis. For buyers sourcing 48V conversion stages for AI rack power, this directly competes with EPC, GaN Systems, Navitas and Innoscience in the 100V E-mode GaN segment, which should pressure lead times and per-piece pricing over the next two quarters.

Action

Pull the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC datasheets and characterize them against incumbent 80V/100V silicon and GaN MOSFETs in your 48V-to-POL and motor-drive reference designs. XAIPART analysis. Request EV samples from Renesas or XAIPART now, lock second-source pin-compatible GaN parts for risk, and add the family to your AI server PSU and humanoid actuator shortlists.

XAIPART Forecast

XAIPART expects that if Renesas publishes distributor stock on at least one of the four 100V E-mode GaN part numbers (RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC or RTP100E1P2G1FL-DSC) at MOQ 100 by Q1 2027, and quoted lead time does not exceed 16 weeks, then Renesas will be a credible second source in 100V E-mode GaN alongside EPC, Navitas and Innoscience for 48V AI data center power stages. XAIPART analysis

Facts are as reported by the cited source. The design-in, sourcing and forward-looking statements above are XAIPART's analysis, not the source's claims. Unconfirmed / single-source: distributor pricing, lead times, production volume and any benchmark numbers versus specific named competing GaN parts were not disclosed by the source.

Corrections: none at publication. This brief will be updated with a timestamp if the source corrects its report.

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Cost pressure by dimension — composite stateDiverging bars for three dimensions around a zero midpoint. Input Cost has no reading; Supply Demand z -1.4711, notable; Fx Energy z 0.1754, neutral. Composite index -9.7, band neutral.0Input costno readingSupply/demandz −1.4711 · notable46 dFX & energyz +0.1754 · neutral5 dcomposite −9.7 · neutral−100 · −40 · −15 · 0 · +15 · +40 · +100
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Sumber

  1. Renesas Expands GaN Portfolio with First Low-Voltage GaN FETs for AI Data Centers and Robotics — https://www.eejournal.com/industry_news/renesas-expands-gan-portfolio-with-first-low-voltage-gan-fets-for-ai-data-centers-and-robotics/ · rss · diakses

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