2EDN7534FXTMA1 vs 2ED2183S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 2EDN7534FXTMA1 dari Infineon dan 2ED2183S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDN7534FXTMA1 2ED2183S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Low-Side, Dual Channel Half-Bridge Gate Driver
Number of Drivers 2 1
Peak Output Current 5 A (source/sink) —
Supply Voltage (VDD) 4.5 V to 20 V —
Input Voltage Range (logic pins) -12 V to +22 V (absolute max) —
Propagation Delay (typical) 19 ns —
Input Logic Compatibility LV-TTL —
Output Polarity Non-Inverting —
Output Voltage Clamping Active, to VDD —
Rise Time (typ.) [DATA_NEEDED: rise time] —
Fall Time (typ.) [DATA_NEEDED: fall time] —
Channel-to-Channel Skew [DATA_NEEDED: channel skew] —
Under-Voltage Lockout Yes —
Tombol Aktifkan Yes —
Suhu Kerja -40C to +125C -40 C to +125 C
Paket PG-DSO-8 PG-DSO-8-53 (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Jumlah Output — 1 (half-bridge: high-side + low-side)
Configuration — High Side, Low Side, Non-Inverting
Maximum Offset Voltage — 650 V
Output Current (Sink/Source) — 2.5 A typical
Waktu naik — 15 ns
Waktu Menurun — 15 ns
Supply Voltage (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V (typ.)
Logic Input Voltage — 3.3 V / 5 V compatible (HIN, LIN)
Input Type — Non-Inverting
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — VCC and VBS
Level MSL — 2
Terminal Finish — Tin (e3 per JESD-609)
Technology — SOI (Silicon-On-Insulator)

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