BSC010NE2LSIATMA1 vs BSC0902NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC010NE2LSIATMA1 dari Infineon dan BSC0902NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC010NE2LSIATMA1 BSC0902NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series / Family OptiMOS 25V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Paket PG-TDSON-8-7 (TDSON-8 EP) PG-TDSON-8-6 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) —
Rentang Suhu Kerja -55C to +150C (TJ) -55C to +150C (junction)
Jumlah Pin 8 —
Status RoHS Compliant Compliant
Gate Drive Logic-level compatible —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
Built-in Diode — Yes (single with built-in diode)
Lead-Free — Yes
Bebas Halogen — Yes

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