BSC010NE2LSIATMA1 vs BSC0902NSIATMA1 비교
다음의 상세 나란히 비교: BSC010NE2LSIATMA1 제조: Infineon 및 BSC0902NSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC010NE2LSIATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.92 | $0.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series / Family | OptiMOS 25V | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| 패키지 | PG-TDSON-8-7 (TDSON-8 EP) | PG-TDSON-8-6 (TDSON-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | OptiMOS (Trench) | — |
| 동작 온도 범위 | -55C to +150C (TJ) | -55C to +150C (junction) |
| 핀 수 | 8 | — |
| RoHS 상태 | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Product Family | — | OptiMOS 30V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | — | 23 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) Max at VGS=10V | — | 2.8 mOhm |
| Gate Charge QG(0V..10V) | — | 24 nC |
| Output Charge QOSS | — | 17 nC |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 48 W |
| Built-in Diode | — | Yes (single with built-in diode) |
| Lead-Free | — | Yes |
| 할로겐 프리 | — | Yes |