BSC010NE2LSIATMA1 vs BSZ018NE2LSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC010NE2LSIATMA1 dari Infineon dan BSZ018NE2LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC010NE2LSIATMA1 BSZ018NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series / Family OptiMOS 25V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Paket PG-TDSON-8-7 (TDSON-8 EP) PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) OptiMOS (Infineon trench MOSFET)
Rentang Suhu Kerja -55C to +150C (TJ) -55 C to +150 C
Jumlah Pin 8 —
Status RoHS Compliant Compliant
Gate Drive Logic-level compatible —
Level MSL [DATA_NEEDED: MSL rating] —
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Part Number — BSZ018NE2LSIATMA1
Channel Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 22 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Pulsed Drain Current (IDM) — 160 A
Typical On-Resistance RDS(on) at VGS=10V — 1.8 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 69 W
Lead-Free — Yes

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