BSC010NE2LSIATMA1 vs BSZ018NE2LSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC010NE2LSIATMA1 disebabkan oleh Infineon dan BSZ018NE2LSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC010NE2LSIATMA1 BSZ018NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series / Family OptiMOS 25V —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Kemasan PG-TDSON-8-7 (TDSON-8 EP) PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) OptiMOS (Infineon trench MOSFET)
Gambaran Suhu Operasi -55C to +150C (TJ) -55 C to +150 C
Kiraan Pin 8 —
Status RoHS Compliant Compliant
Gate Drive Logic-level compatible —
Aras MSL [DATA_NEEDED: MSL rating] —
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Part Number — BSZ018NE2LSIATMA1
Channel Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 22 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Pulsed Drain Current (IDM) — 160 A
Typical On-Resistance RDS(on) at VGS=10V — 1.8 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 69 W
Lead-Free — Yes

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