BSC014N04LSIATMA1 vs BSC0901NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC014N04LSIATMA1 dari Infineon dan BSC0901NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC014N04LSIATMA1 BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC014N04LSIATMA1 BSC0901NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (trench, thin-wafer) N-Channel Trench MOSFET (OptiMOS)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc) 100 A —
Continuous Drain Current (ID, Ta) 31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
RDS(on) max at VGS=10 V 1.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation (PD, Tc) 96 W —
Power Dissipation (PD, Ta) 2.5 W —
Rentang Suhu Kerja -55 C to +150 C -55C to +150C
Paket PG-TDSON-8 FL (TDSON-8 with exposed drain pad) TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Tradename OptiMOS —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Tingkat Sensitivitas Kekeringan (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

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