BSC014N04LSIATMA1 vs IRFR1018ETRPBF Perbandingan
Perbandingan bersamaan detil BSC014N04LSIATMA1 dari Infineon dan IRFR1018ETRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC014N04LSIATMA1 | IRFR1018ETRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench, thin-wafer) | HEXFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, Ta) | 31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc) | 96 W | — |
| Power Dissipation (PD, Ta) | 2.5 W | — |
| Rentang Suhu Kerja | -55 C to +150 C | -55 °C to +175 °C |
| Paket | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) | TO-252AA (D-Pak) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Tradename | OptiMOS | — |
| Drain-to-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) | — | 79 A (Tc) |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Rds(on) Max @ Vgs=10V | — | 8.4 mΩ |
| Rds(on) Max @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 46 nC |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Maximum Power Dissipation (Pd) | — | 110 W (Tc) |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |