BSC016N06NSATMA1 vs BSC047N08NS3GATMA1 Perbandingan
Perbandingan bersamaan detil BSC016N06NSATMA1 dari Infineon dan BSC047N08NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC016N06NSATMA1 | BSC047N08NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 100 A | — |
| Continuous Drain Current (ID, TA) | 30 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΩ | — |
| Total Gate Charge (Qg) | 71 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 139 W | — |
| Rentang Suhu Kerja | -55 °C to +150 °C | -55 °C to +175 °C (Tj) |
| Paket | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (unlimited) | — |
| Status RoHS | Compliant | — |
| Gate Drive (recommended) | 10 V | — |
| Technology | OptiMOS™ 5 | OptiMOS™ 3 (N-channel trench) |
| Part Number | — | BSC047N08NS3GATMA1 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-Resistance RDS(on) max | — | 4.7 mOhm at VGS=10 V |
| Power Dissition (Tc) | — | 125 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Gate Threshold Voltage (VGS th) | — | Normal level (typ 1.7 V) |
| Avalanche Rated | — | 100% tested |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |