BSC016N06NSATMA1 vs BSC047N08NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC016N06NSATMA1 by Infineon and BSC047N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 ✓ Active

Specification Comparison

Parameter BSC016N06NSATMA1 BSC047N08NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS™ 5 60V
Channel Type N-Channel
Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID, Tc) 100 A
Continuous Drain Current (ID, TA) 30 A
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ
Total Gate Charge (Qg) 71 nC
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (TA) 2.5 W
Power Dissipation (TC) 139 W
Operating Temperature Range -55 °C to +150 °C -55 °C to +175 °C (Tj)
Package PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited)
RoHS Status Compliant
Gate Drive (recommended) 10 V
Technology OptiMOS™ 5 OptiMOS™ 3 (N-channel trench)
Part Number BSC047N08NS3GATMA1
Drain-Source Voltage (VDS) max 80 V
Continuous Drain Current (ID) at Tc 100 A
Continuous Drain Current (ID) at Ta 18 A
On-Resistance RDS(on) max 4.7 mOhm at VGS=10 V
Power Dissition (Tc) 125 W
Power Dissipation (Ta) 2.5 W
Gate Threshold Voltage (VGS th) Normal level (typ 1.7 V)
Avalanche Rated 100% tested
RoHS / Halogen-Free RoHS compliant, Halogen-free

Datasheets & Resources

Browse All Products Create BOM Request Quote