BSC016N06NSTATMA1 vs ISC015N06NM5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC016N06NSTATMA1 dari Infineon dan ISC015N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC016N06NSTATMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC016N06NSTATMA1 —
FET Type N-Channel —
Technology OptiMOS 5 Trench MOSFET (OptiMOS 5)
Drain-to-Source Voltage (VDS) 60 V 60 V
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 31 A —
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm —
Power Dissipation (Tc) 167 W —
Power Dissipation (Ta) 3 W —
Paket PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8 (PQFN 5x6) Drain-Down
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C -55 C to +175 C
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant
Lead-Free Yes —
Series OptiMOS —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon