BSC016N06NSTATMA1 vs ISC015N06NM5ATMA1 Comparison

Detailed side-by-side comparison of BSC016N06NSTATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC016N06NSTATMA1

BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 βœ“ Active
Infineon
ISC015N06NM5ATMA1 ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC016N06NSTATMA1 ISC015N06NM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $0.62
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC016N06NSTATMA1 β€”
FET Type N-Channel β€”
Technology OptiMOS 5 Trench MOSFET (OptiMOS 5)
Drain-to-Source Voltage (VDS) 60 V 60 V
Gate-to-Source Voltage (VGS) Β±20 V β€”
Continuous Drain Current (ID, Tc=25C) 100 A β€”
Continuous Drain Current (ID, Ta=25C) 31 A β€”
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm β€”
Power Dissipation (Tc) 167 W β€”
Power Dissipation (Ta) 3 W β€”
Package PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8 (PQFN 5x6) Drain-Down
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C -55 C to +175 C
MSL Level [DATA_NEEDED: MSL level] β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Series OptiMOS β€”
Product Family β€” OptiMOS 5
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 33 A
Pulsed Drain Current (IDM) at TC=25C β€” 259 A
On-Resistance RDS(on) typical at VGS=10V β€” 1.5 mOhm
Total Power Dissipation (TA) β€” 3 W
Total Power Dissipation (TC) β€” 188 W
MSL (Moisture Sensitivity Level) β€” 1

Datasheets & Resources

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