BSC018N04LSGATMA1 vs BSC0502NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC018N04LSGATMA1 dari Infineon dan BSC0502NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC018N04LSGATMA1 BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC018N04LSGATMA1 BSC0502NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 5 (Trench MOSFET)
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Continuous Drain Current (ID) @ TA=25°C 30 A —
Power Dissipation (PD) @ TC=25°C 125 W —
Power Dissipation (PD) @ TA=25°C 2.5 W —
RDS(on) Max @ VGS=10 V 1.8 mΩ —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Rentang Suhu Kerja -55°C to +150°C (TJ) -55C to +150C
Paket PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (Pb-free plating) Compliant
Avalanche Tested 100% (per datasheet) —
JEDEC Qualification Yes (qualified per JEDEC for target applications) —
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC — 100 A
Continuous Drain Current (ID) at TA — 26 A
RDS(on) Max at VGS=10V — 2.3 mOhm
Gate Charge QG (0V to 4.5V) Typ — 9.0 nC
Output Charge QOSS Typ — 13.5 nC
Power Dissipation at TA (Ta=25C) — 2.5 W
Power Dissipation at TC (Tc=25C) — 43 W
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]

Spek dan Sumber

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