BSC027N06LS5ATMA1 vs BSC034N06NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC027N06LS5ATMA1 dari Infineon dan BSC034N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC027N06LS5ATMA1 BSC034N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5
Drain-Source Voltage (VDS) 60 V 60 V
Gate-Source Voltage (VGS) ±20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) Logic-level [DATA_NEEDED: VGS(th)]
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: IDM]
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Rentang Suhu Kerja -55°C to +150°C -55C to +150C
Paket / Case PG-TDSON-8-7 (SuperSO8 5x6) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 —
Polarity — N-Channel
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W
Paket — PG-TDSON-8-7 (SuperSO8 5x6 mm)
Level MSL — [DATA_NEEDED: MSL level]

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