BSC027N06LS5ATMA1 vs BSC034N06NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N06LS5ATMA1 sa pamamagitan ng Infineon at BSC034N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Nakahanda
Infineon
BSC034N06NSATMA1 BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC027N06LS5ATMA1 BSC034N06NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5
Drain-Source Voltage (VDS) 60 V 60 V
Gate-Source Voltage (VGS) ±20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) Logic-level [DATA_NEEDED: VGS(th)]
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: IDM]
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Hanay ng Temperature na Operasyon -55°C to +150°C -55C to +150C
Packhaging / Kaso PG-TDSON-8-7 (SuperSO8 5x6) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Tindminan RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 —
Polarity — N-Channel
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W
Packhaging — PG-TDSON-8-7 (SuperSO8 5x6 mm)
Level ng MSL — [DATA_NEEDED: MSL level]

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