BSC028N06NSTATMA1 vs BSC016N06NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC028N06NSTATMA1 dari Infineon dan BSC016N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC028N06NSTATMA1 BSC016N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Part Number Base BSC028N06NS —
Technology MOSFET N-Channel (OptiMOS 5) OptiMOS™ 5
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TA=25C 24 A —
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 2.8 mOhm —
Gate Threshold Voltage VGS(th) typ 2.5 V to 3.5 V —
Total Gate Charge Qg 37 nC @ VGS=10V —
Input Capacitance Ciss 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] —
Output Capacitance Coss 825 pF —
Reverse Transfer Capacitance Crss 56 pF —
Power Dissipation (TA) 3 W 2.5 W
Power Dissipation (TC) 100 W 139 W
Suhu Hubung Kerja -55C to +175C —
Paket PG-TDSON-8-7 (SuperSO8, 5x6 mm) PG-TDSON-8 FL (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Bebas Halogen Yes —
Level MSL 1 1 (unlimited)
AEC-Q101 Automotive Qualified [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] —
Product Series — OptiMOS™ 5 60V
Channel Type — N-Channel
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, TA) — 30 A
On-Resistance RDS(on) max @ VGS=10V — 1.6 mΩ
Total Gate Charge (Qg) — 71 nC
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Rentang Suhu Kerja — -55 °C to +150 °C
Gate Drive (recommended) — 10 V

Spek dan Sumber

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