BSC033N08NS5SCATMA1 vs BSC027N06LS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC033N08NS5SCATMA1 dari Infineon dan BSC027N06LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC033N08NS5SCATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS™ 5 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (Tc) | 144 A | — |
| Power Dissipation (Tc) | 136 W | — |
| RDS(on) max @ VGS=10V | 3.3 mOhm | — |
| Gate-Source Voltage (VGS) | +/- 20 V | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | Logic-level |
| Thermal Resistance RthJC | 0.86 K/W | — |
| Paket | PG-WSON-8-2 (SuperSO8 DSC) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C | -55°C to +150°C |
| Technology | Trench (OptiMOS 5) | MOSFET (Metal Oxide) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | — |
| Part Status | — | Active |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Tc=100°C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 2.7 mOhm |
| On-Resistance (RDS(on)) @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Tc=25°C | — | 83 W |
| Paket / Case | — | PG-TDSON-8-7 (SuperSO8 5x6) |
| Jumlah Pin | — | 8 |
| Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Avalanche Energy Rated | — | Yes |
| MSL (Moisture Sensitivity Level) | — | MSL1 |