BSC039N06NSATMA1 vs IAUC60N04S6L039ATMA1 Perbandingan

Perbandingan bersamaan detil BSC039N06NSATMA1 dari Infineon dan IAUC60N04S6L039ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC60N04S6L039ATMA1 IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC039N06NSATMA1 IAUC60N04S6L039ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA 19 A —
Continuous Drain Current (ID) at TC 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value at TC] —
On-Resistance RDS(on) max at VGS=10V 3.9 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Power Dissipation at TA (PD) 2.5 W —
Power Dissipation at TC (PD) 69 W —
Suhu Hubung Kerja -55C to +150C -55C to +175C
Paket PG-TDSON-8-6 (TDSON EP, 5x6 mm) PG-TDSON-8 (SSO8) 5x6 mm
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Drive Voltage (VGS) ±20 V max —
Technology OptiMOS 5 (TrenchFET-style) OptiMOS 6 (trench)
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_C=25C) — 60 A
Pulsed Drain Current (I_DM) — 240 A
R_DS(on) max @ V_GS=10V — 3.9 milliohm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Power Dissipation (P_D) — 42 W
Automotive Qualification — AEC-Q101 qualified
Avalanche Rated — Yes (100% avalanche tested)

Spek dan Sumber

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