BSC0502NSIATMA1 vs BSZ0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSC0502NSIATMA1 dari Infineon dan BSZ0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0502NSIATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 5 (Trench MOSFET) OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC 100 A —
Continuous Drain Current (ID) at TA 26 A —
RDS(on) Max at VGS=10V 2.3 mOhm —
Gate Charge QG (0V to 4.5V) Typ 9.0 nC —
Output Charge QOSS Typ 13.5 nC —
Power Dissipation at TA (Ta=25C) 2.5 W —
Power Dissipation at TC (Tc=25C) 43 W —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Rentang Suhu Kerja -55C to +150C -55 C to +150 C (typical MOSFET range)
Paket PG-TDSON-8 (SuperSO8 5x6) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Jumlah Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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