BSC0502NSIATMA1 vs BSZ0901NSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC0502NSIATMA1 sa pamamagitan ng Infineon at BSZ0901NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC0502NSIATMA1 BSZ0901NSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology OptiMOS 5 (Trench MOSFET) OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC 100 A —
Continuous Drain Current (ID) at TA 26 A —
RDS(on) Max at VGS=10V 2.3 mOhm —
Gate Charge QG (0V to 4.5V) Typ 9.0 nC —
Output Charge QOSS Typ 13.5 nC —
Power Dissipation at TA (Ta=25C) 2.5 W —
Power Dissipation at TC (Tc=25C) 43 W —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Hanay ng Temperature na Operasyon -55C to +150C -55 C to +150 C (typical MOSFET range)
Packhaging PG-TDSON-8 (SuperSO8 5x6) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Bilang ng Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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