BSC050N04LSGATMA1 vs BSC076N04NDATMA1 Perbandingan

Perbandingan bersamaan detil BSC050N04LSGATMA1 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC050N04LSGATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel 2x N-Channel MOSFET array
Drain-to-Source Voltage (VDS) 40 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current at 25C (ID, Ta) 18 A —
Continuous Drain Current at 25C (ID, Tc) 85 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] —
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 57 W —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] —
On-State Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] 4 V (max, typical)
Technology OptiMOS 3 (trench MOSFET) Trench MOSFET (OptiMOS 3)
Paket PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C —
Avalanche Energy Rated Yes (single-pulse avalanche) —
Status RoHS Compliant —
Level MSL 1 —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubung Kerja — -55 C to +175 C
Paket / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)

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