BSC070N10NS5ATMA1 vs IPB024N10N5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC070N10NS5ATMA1 dari Infineon dan IPB024N10N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC070N10NS5ATMA1 IPB024N10N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench) OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at TC=25C 80 A —
RDS(on) max @ VGS=10V 7 mOhm —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] [DATA_NEEDED: Qg total gate charge]
Power Dissition at TC=25C (Ptot) 83 W —
Power Dissipation at TA=25C 2.5 W —
Rentang Suhu Hubung Kerja -55 C to +150 C —
Paket PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TO263-7 (D2PAK-7)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) 1 (unlimited floor life at <30C/85% RH)
Status RoHS Compliant Compliant
Lead-Free Yes —
Typical Application Synchronous rectification in SMPS —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, TC=25C) — 180 A
Power Dissipation (PD, TC=25C) — 250 W
On-Resistance RDS(on) max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss — [DATA_NEEDED: Ciss value]
Output Capacitance Coss — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Rentang Suhu Kerja — -55C to +175C (junction)
Packaging — Tape & Reel (13-inch reel)
Bebas Halogen — Yes (per Infineon product family policy)

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