BSC0902NSATMA1 vs BSC0911NDATMA1 Perbandingan

Perbandingan bersamaan detil BSC0902NSATMA1 dari Infineon dan BSC0911NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0902NSATMA1 BSC0911NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID, Ta) 24 A —
Pulsed Drain Current (IDM, Tc) 100 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 48 W —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
RDS(on) @ VGS=10V max [DATA_NEEDED: RDS(on) at VGS=10V] —
RDS(on) @ VGS=4.5V max [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55C to +150C (Tj) —
Paket PG-TDSON-8-6 (SuperSO8) PG-TISON-8 (8-PowerTDFN)
Tipe Mounting Surface Mount Surface Mount
Qualification JEDEC qualified for target applications —
RoHS Compliance Compliant (Pb-free lead plating) —
Bebas Halogen Yes, per IEC 61249-2-21 —
Avalanche Rated Yes (100% avalanche tested) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 25V
Configuration — Dual N-Channel (2 N-CH)
Continuous Drain Current (ID) — 18 A
Pulsed Drain Current (IDM) — 30 A
Power Dissipation (PD) — 1 W
Suhu Kerja — -55C to +150C (junction)
Channel Type — N-Channel Enhancement Mode
Technology — OptiMOS trench MOSFET
Gate Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Status RoHS — Compliant
Level MSL — [DATA_NEEDED: MSL rating]

Spek dan Sumber

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