BSC0902NSATMA1 vs BSC0911NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0902NSATMA1 disebabkan oleh Infineon dan BSC0911NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0902NSATMA1 BSC0911NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID, Ta) 24 A —
Pulsed Drain Current (IDM, Tc) 100 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 48 W —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
RDS(on) @ VGS=10V max [DATA_NEEDED: RDS(on) at VGS=10V] —
RDS(on) @ VGS=4.5V max [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg typical] —
Gambaran Suhu Operasi -55C to +150C (Tj) —
Kemasan PG-TDSON-8-6 (SuperSO8) PG-TISON-8 (8-PowerTDFN)
Jenis Pemasangan Surface Mount Surface Mount
Qualification JEDEC qualified for target applications —
RoHS Compliance Compliant (Pb-free lead plating) —
Boson Bebas Yes, per IEC 61249-2-21 —
Avalanche Rated Yes (100% avalanche tested) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 25V
Configuration — Dual N-Channel (2 N-CH)
Continuous Drain Current (ID) — 18 A
Pulsed Drain Current (IDM) — 30 A
Power Dissipation (PD) — 1 W
Suhu Operasi — -55C to +150C (junction)
Channel Type — N-Channel Enhancement Mode
Technology — OptiMOS trench MOSFET
Gate Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Status RoHS — Compliant
Aras MSL — [DATA_NEEDED: MSL rating]

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