BSC098N10NS5ATMA1 vs BSZ031NE2LS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC098N10NS5ATMA1 dari Infineon dan BSZ031NE2LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSC098N10NS5ATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj min/max] | — |
| Paket | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | [DATA_NEEDED: MSL] |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ031NE2LS5ATMA1 |
| Technology / Platform | — | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | — | 25 V |
| Continuous Drain Current (ID) at Ta=25C | — | 19 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| RDS(on) max @ VGS=10 V | — | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 30 W |
| Suhu Hubung Kerja | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |