BSP125H6327XTSA1 vs BSP125H6433XTMA1 Perbandingan

Perbandingan bersamaan detil BSP125H6327XTSA1 dari Infineon dan BSP125H6433XTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP125H6433XTMA1 BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 - 600V N-Ch 120mA MOSFET | Infineon

BSP125H6433XTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSP125H6327XTSA1 BSP125H6433XTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSP125H6327XTSA1 —
Tipe Transistor N-Channel MOSFET —
Technology SIPMOS (Small Signal Power MOSFET) —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 120 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Paket PG-SOT223-4 (SOT-223-3 + tab) PG-SOT223-4 (3+tab)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C (TJ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] [DATA_NEEDED: RDS(on) at VGS=10V]
Configuration Single Single N-Channel MOSFET
Channel Mode Enhancement —
Status RoHS Compliant Compliant
Level MSL 1 (Unlimited) —
Qualification Automotive / Industrial grade —
FET Type — N-Channel Enhancement Mode
Drain-Source Voltage (V(BR)DSS) — 600 V
Continuous Drain Current (ID) at TA — 120 mA
Power Dissipation (PD) at TA — 1.8 W
Automotive Qualification — AEC-Q101
Lead Plating — Pb-free
Rentang Suhu Kerja — -55C to +150C (TJ)
Total Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Thermal Resistance RthJA — [DATA_NEEDED: theta_JA on standard PCB]

Spek dan Sumber

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