BSP125H6327XTSA1 vs BSP125H6433XTMA1 比較
詳細な並列比較: BSP125H6327XTSA1 メーカー: Infineon および BSP125H6433XTMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSP125H6327XTSA1 | BSP125H6433XTMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.38 | $1.05 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP125H6327XTSA1 | — |
| トランジスタタイプ | N-Channel MOSFET | — |
| Technology | SIPMOS (Small Signal Power MOSFET) | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| パッケージ | PG-SOT223-4 (SOT-223-3 + tab) | PG-SOT223-4 (3+tab) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | -55C to +150C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | Single | Single N-Channel MOSFET |
| Channel Mode | Enhancement | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 (Unlimited) | — |
| Qualification | Automotive / Industrial grade | — |
| FET Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (V(BR)DSS) | — | 600 V |
| Continuous Drain Current (ID) at TA | — | 120 mA |
| Power Dissipation (PD) at TA | — | 1.8 W |
| Automotive Qualification | — | AEC-Q101 |
| Lead Plating | — | Pb-free |
| 動作温度範囲 | — | -55C to +150C (TJ) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Thermal Resistance RthJA | — | [DATA_NEEDED: theta_JA on standard PCB] |