BSS123NH6327XTSA1 vs BSS214NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS123NH6327XTSA1 dari Infineon dan BSS214NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ Aktif
Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS123NH6327XTSA1 BSS214NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS123NH6327XTSA1 —
Part Status Active —
FET Type N-Channel, Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 100 V 20 V
Continuous Drain Current (ID) 190 mA (Ta) 1.5 A (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
RDS(on) Max 6 Ω @ VGS = 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and max VGS(th)] —
Gate-Source Voltage Max (VGS) ±20 V —
Paket PG-SOT23 (SOT-23-3) SOT-23 (PG-SOT23), 3 pins
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C (junction) -55C to +150C (junction)
Qualification AEC-Q101 (automotive) AEC-Q101 (Automotive)
RoHS Compliance Yes (Pb-free lead plating) —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Drain-Source On-Resistance (RDS(on) max) — 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Technology — OptiMOS 2 (planar N-channel)
Lead Finish — Pb-free lead plating (matte tin)
Status RoHS — Compliant
ESD Protection — Yes (gate ESD diode)

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