BSS138NH6327XTSA2 vs BSS306NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS138NH6327XTSA2 dari Infineon dan BSS306NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS138NH6327XTSA2 BSS306NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
Paket PG-SOT-23 (3-pin) SOT-23 (PG-SOT23), 3-pin
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj max and operating range] —
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
Bebas Halogen Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free Pb-free (RoHS compliant)
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel —
Manufacturer — Infineon Technologies
Part Number — BSS306NH6327XTSA1
Part Family — BSS306N (OptiMOS Small Signal)
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) — 2.3 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) max — [DATA_NEEDED: exact RDS(on) max value in mΩ]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max in V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) in V]
Suhu Kerja — -55°C to +150°C (TJ)
Qualification — AEC-Q101 (Automotive)
Configuration — Single N-Channel, 3-pin

Spek dan Sumber

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