BSS816NWH6327XTSA1 vs BSS806NEH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS816NWH6327XTSA1 dari Infineon dan BSS806NEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS816NWH6327XTSA1 | BSS806NEH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | — |
| Tipe Transistor | MOSFET, N-Channel | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 20 V | 20 V (maximum) |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| RDS(on) max @ VGS=4.5V | 160 mOhm | — |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| Rentang Suhu Kerja | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Paket | SOT-323 (PG-SOT323), 3-pin | PG-SOT23 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology | OptiMOS 2 trench MOSFET | — |
| ESD Protection | Yes (integrated, per Infineon datasheet) | — |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| Level MSL | 1 | — |
| Part Number | — | BSS806NEH6327XTSA1 |
| Mode of Operation | — | Enhancement-mode |
| Continuous Drain Current (ID) | — | 2.3 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-Resistance RDS(on) | — | 57 mOhm (maximum) |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Yes (compliant) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |