BSS84PH6327XTSA2 vs BSS84-7-F Perbandingan

Perbandingan bersamaan detil BSS84PH6327XTSA2 dari Infineon dan BSS84-7-F dari Diodes Incorporated. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Diodes Incorporated
BSS84-7-F BSS84-7-F - P-Channel 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F - P-Channel 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS84PH6327XTSA2 BSS84-7-F
Merek Infineon Diodes Incorporated
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS84PH6327XTSA2 —
FET Type P-Channel —
Drain-to-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -170 mA (Ta) —
Power Dissipation (PD) 360 mW (Ta) —
On-State Resistance (RDS(on)) max 8 ohm at VGS = -10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
Gate-to-Source Voltage (VGS) +/-20 V —
Paket PG-SOT23 (SOT-23-3) SOT-23-3
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C —
Qualification AEC-Q101 (Automotive) —
Technology Family SIPMOS OptiMOS —
Polarity P-Channel Enhancement Mode —
Status RoHS Compliant Compliant
Lead-Free Yes —
Transistor Polarity — P-Channel
Mode of Operation — Enhancement Mode
Drain-Source Voltage VDS — 50 V
Continuous Drain Current ID — 130 mA (Ta)
Power Dissipation PD — 300 mW (Ta)
Gate-Source Voltage VGS — [DATA_NEEDED: Gate-Source Voltage VGS]
Gate-Source Threshold Voltage VGS(th) — [DATA_NEEDED: Gate-Source Threshold Voltage]
On-State Resistance RDS(on) — [DATA_NEEDED: On-State Resistance RDS(on)]
Total Gate Charge Qg — [DATA_NEEDED: Total Gate Charge]
Input Capacitance Ciss — [DATA_NEEDED: Input Capacitance Ciss]
Configuration — Single FET
Terminal Finish — Matte tin plated (solderable per MIL-STD-202)
Packaging Suffix — -7-F (Tape and Reel)
Technology — Si

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