BSS84PH6327XTSA2 vs BSS84-7-F 비교
다음의 상세 나란히 비교: BSS84PH6327XTSA2 제조: Infineon 및 BSS84-7-F 제조: Diodes Incorporated. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS84PH6327XTSA2 | BSS84-7-F |
|---|---|---|
| 브랜드 | Infineon | Diodes Incorporated |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.10 | $0.02 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS84PH6327XTSA2 | — |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) | -170 mA (Ta) | — |
| Power Dissipation (PD) | 360 mW (Ta) | — |
| On-State Resistance (RDS(on)) max | 8 ohm at VGS = -10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-to-Source Voltage (VGS) | +/-20 V | — |
| 패키지 | PG-SOT23 (SOT-23-3) | SOT-23-3 |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -55C to +150C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology Family | SIPMOS OptiMOS | — |
| Polarity | P-Channel Enhancement Mode | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Transistor Polarity | — | P-Channel |
| Mode of Operation | — | Enhancement Mode |
| Drain-Source Voltage VDS | — | 50 V |
| Continuous Drain Current ID | — | 130 mA (Ta) |
| Power Dissipation PD | — | 300 mW (Ta) |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: Gate-Source Voltage VGS] |
| Gate-Source Threshold Voltage VGS(th) | — | [DATA_NEEDED: Gate-Source Threshold Voltage] |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: On-State Resistance RDS(on)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Total Gate Charge] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Input Capacitance Ciss] |
| Configuration | — | Single FET |
| Terminal Finish | — | Matte tin plated (solderable per MIL-STD-202) |
| Packaging Suffix | — | -7-F (Tape and Reel) |
| Technology | — | Si |