BSS87H6327FTSA1 vs BSS205NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS87H6327FTSA1 dari Infineon dan BSS205NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS87H6327FTSA1 BSS205NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel enhancement-mode —
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 260 mA (Ta) —
Power Dissipation (PD) 1 W (Ta) —
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Paket PG-SOT89-4-2 (SOT-89) PG-SOT23 (SC-59, TO-236-3), 3-pin
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55 °C to +150 °C (junction)
Jumlah Pin 3 (Gate / Drain / Source) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant —
Lead-Free / Pb-Free Yes (Pb-free plating) —
Level MSL 1 (per JEDEC J-STD-020) —
Process Technology Vertical DMOS —
Manufacturer — Infineon Technologies
Part Number — BSS205NH6327XTSA1
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage V<sub>DS</sub> — 20 V
Continuous Drain Current I<sub>D</sub> (Ta) — 2.5 A
Power Dissipation P<sub>D</sub> (Ta) — 500 mW
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) — 85 mΩ
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: Vgs(th) typical value]
Gate Drive Voltage — Logic-level compatible
Qualification — AEC-Q101
Lead Plating — Pb-free
RoHS Compliance — Compliant
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Packaging — Tape & Reel (H6327)

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