BSZ060NE2LSATMA1 vs BSC039N06NSATMA1 Perbandingan
Perbandingan bersamaan detil BSZ060NE2LSATMA1 dari Infineon dan BSC039N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ060NE2LSATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ060NE2LSATMA1 | — |
| Technology | OptiMOS™ (N-Channel Trench MOSFET) | OptiMOS 5 (TrenchFET-style) |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | — |
| Pulsed Drain Current (IDM) | 44 A | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 26 W | — |
| Rentang Suhu Kerja | -55C to +150C | — |
| Paket | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Shipping Packaging | Tape & Reel | — |
| Series | — | OptiMOS 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| Suhu Hubung Kerja | — | -55C to +150C |
| Jumlah Pin | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |