BSZ0901NSIATMA1 vs BSC019N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSZ0901NSIATMA1 dari Infineon dan BSC019N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ0901NSIATMA1 BSC019N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ0901NSIATMA1 —
Series OptiMOS 25V —
Technology OptiMOS trench N-channel MOSFET OptiMOS 5 (N-channel trench)
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 25 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
Paket PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TSON-8-3 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Rentang Suhu Kerja -55 C to +150 C (typical MOSFET range) -55 C to +150 C
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
Status RoHS Compliant Compliant
Polarity — N-Channel
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
Level MSL — 1
Avalanche Rated — Yes

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