BSZ130N03LSGATMA1 vs BSC019N04NSGATMA1 Perbandingan

Perbandingan bersamaan detil BSZ130N03LSGATMA1 dari Infineon dan BSC019N04NSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ130N03LSGATMA1 BSC019N04NSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 25V / 30V —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Ta=25 C) 10 A —
Arus Alir Berlanjut (TC=25°C) 35 A —
On-State Resistance Rds(on) max @ Vgs=10V 13 mOhm —
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA 2.2 V —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 25 W —
Paket PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) PG-TDSON-8-1 (TDSON-8 FL)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C (junction) -55C to +150C
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Bebas Halogen Yes —
Qualification Industrial / Commercial (non-automotive) —
Tipe Transistor — N-Channel MOSFET
Technology — OptiMOS (trench)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TA=25C — 30 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10V — 2.5 mΩ
RDS(on) typ at VGS=10V — 1.9 mΩ
Gate-Source Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TA=25C — 2.5 W
Power Dissipation (PD) at TC=25C — 125 W

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